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W971GG8NB-25
  • image of Memory>W971GG8NB-25
  • image of Memory>W971GG8NB-25
W971GG8NB-25
Memory
Winbond Electronics
IC DRAM 1G PARA
-
托盘
0
-
-
: 6.97598
: 0

264

6.97598

1841.65872

image of Memory>W971GG8NB-25
image of Memory>W971GG8NB-25
W971GG8NB-25
W971GG8NB-25
Memory
Winbond Electronics
IC DRAM 1G PARA
-
托盘
0
-
TYPEDESCRIPTION
MfrWinbond Electronics
Series-
PackageTray
Part StatusActive
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - DDR2
Memory Size1Gb (128M x 8)
Memory InterfaceSSTL_18
Clock Frequency400 MHz
Write Cycle Time - Word, Page15ns
Access Time400 ps
Voltage - Supply1.7V ~ 1.9V
Operating Temperature0°C ~ 85°C (TC)
Mounting TypeSurface Mount
Package / Case60-VFBGA
Supplier Device Package60-VFBGA (8x9.5)
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