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W989D2DBJX6E
  • image of Memory>W989D2DBJX6E
  • image of Memory>W989D2DBJX6E
W989D2DBJX6E
Memory
Winbond Electronics
512MB LPSDR, X3
-
-
0
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-
: 8.81713
: 0

240

8.81713

2116.1112

image of Memory>W989D2DBJX6E
image of Memory>W989D2DBJX6E
W989D2DBJX6E
W989D2DBJX6E
Memory
Winbond Electronics
512MB LPSDR, X3
-
-
0
-
TYPEDESCRIPTION
MfrWinbond Electronics
Series-
PackageTube
Part StatusActive
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - Mobile LPSDR
Memory Size512Mb (16M x 32)
Memory InterfaceLVCMOS
Clock Frequency166 MHz
Write Cycle Time - Word, Page15ns
Access Time5 ns
Voltage - Supply1.7V ~ 1.95V
Operating Temperature-25°C ~ 85°C (TC)
Mounting TypeSurface Mount
Package / Case90-TFBGA
Supplier Device Package90-VFBGA (8x13)
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